STB6N65M2 datasheet(3/23 Pages) STMICROELECTRONICS

3 / 23 page

DocID026762 Rev 1

3/23

STB6N65M2, STD6N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

2.5

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (2)

ISD ≤ 4 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

dv/dt (3)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

DPAK

Rthj-case

Thermal resistance junction-case max

2.08

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

0.5

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

100

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