STB8N90K5

Electrical characteristics

DocID030104 Rev 1

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Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 14: "Test circuit for

resistive load switching times"

and Figure 19: "Switching time

waveform")

-

14.7

-

ns

Rise time

-

13.2

-

ns

Turn-off delay time

-

36.4

-

ns

Fall time

-

13.5

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

8

A

Source-drain current

(pulsed)

-

32

A

VSD(2)

Forward on voltage

-

1.5

V

Reverse recovery time

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

371

ns

Reverse recovery charge

-

4.27

µC

Reverse recovery current

-

23

A

Reverse recovery time

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

582

ns

Reverse recovery charge

-

5.73

µC

Reverse recovery current

-

19.7

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.