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STP28N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STP28N60M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 21 page ![]() March 2017 DocID025254 Rev 4 1/21 This is information on a product in full production. www.st.com STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N- channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID STB28N60M2 650 V 0.150 Ω 22 A STI28N60M2 STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STB28N60M2 28N60M2 D²PAK Tape and reel STI28N60M2 I²PAK Tube STP28N60M2 TO-220 STW28N60M2 TO-247 TAB 1 D ( ) (2 ) G S 3 ( ) AM15572V1 |
类似零件编号 - STP28N60M2 |
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类似说明 - STP28N60M2 |
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