STB43N60DM2 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STB43N60DM2

功能描述	N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

STB43N60DM2

Electrical characteristics

DocID028058 Rev 1

5/15

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

ISDM

(1)

Source-drain

current

(pulsed)

136

VSD

(2)

Forward on

voltage

VGS = 0 V, ISD = 34 A

1.6

trr

Reverse

recovery time

ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 16: "Test circuit for inductive

load switching and diode recovery times")

120

Qrr

Reverse

recovery

charge

0.6

µC

IRRM

Reverse

recovery

current

10.4

trr

Reverse

recovery time

ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

240

Qrr

Reverse

recovery

charge

2.4

µC

IRRM

Reverse

recovery

current

20.5

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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