STB100N6F7 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STB100N6F7

功能描述	N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

DocID027210 Rev 2

3/15

STB100N6F7

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

100

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width is limited by safe operating area

Drain current (pulsed)

400

PTOT

Total dissipation at TC = 25 °C

125

EAS

(2)

Starting Tj =25 °C, ID = 20 A, VDD = 30 V

Single pulse avalanche energy

200

Operating junction temperature

- 55 to 175

°C

Tstg

Storage temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.2

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1inch², 2oz Cu

thermal resistance junction-pcb

°C/W

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