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ASIPT9701 数据表(PDF) 1 Page - Advanced Semiconductor |
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ASIPT9701 数据表(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 25 V BVCES IC = 10 mA 45 V BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V IC = 200 mA 15 --- Cob VCB = 28 V f = 1.0 MHz 7.0 pF PG ηηηη C VCE = 28 V Pout = 5.0 W f = 400 MHz 10 50 12 55 dB % NPN SILICON RF POWER TRANSISTOR PT9701 DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.25 A VCES 45 V PDISS 14 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C θθθθ JC 12 °C/W PACKAGE STYLE .280 4L STUD 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER |
类似零件编号 - ASIPT9701 |
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类似说明 - ASIPT9701 |
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