STP7N60M2 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

DocID024622 Rev 1

3/21

STD7N60M2, STP7N60M2, STU7N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

3.5

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (1)

ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

dv/dt(2)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK TO-220 IPAK

Rthj-case

Thermal resistance junction-case max

2.08

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax )

1.5

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR;

VDD=50)

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