STU11N65M2 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

DocID026376 Rev 1

3/21

STD11N65M2, STP11N65M2, STU11N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

(1)

The value is rated according to R

thj-case

and limited by package.

Drain current (continuous) at T

= 25 °C

(1)

Drain current (continuous) at T

= 100 °C

4.4

(2)

Pulse width limited by T

jmax

Drain current (pulsed)

TOT

(1)

Total dissipation at T

= 25 °C

dv/dt

(3)

≤ 7 A, di/dt ≤ 400 A/μs; V

DS peak

< V

(BR)DSS

, V

=80% V

(BR)DSS

Peak diode recovery voltage slope

(starting T

= 25 °C, I

= I

, V

= 50 V)

V/ns

dv/dt

(4)

≤ 520 V

MOSFET dv/dt ruggedness

V/ns

ISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

IPAK

thj-case

Thermal resistance junction-case max

1.47

°C/W

thj-amb

Thermal resistance junction-amb max

62.5

100

°C/W

thj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not

repetitive (pulse width limited by T

jmax

)

1.5

Single pulse avalanche energy (starting

=25°C, I

= I

; V

=50)

110

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