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STF25N10F7 数据表(PDF) 4 Page - STMicroelectronics

部件名 STF25N10F7
功能描述  Ultra low on-resistance
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF25N10F7 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD25N10F7, STF25N10F7, STP25N10F7
4/21
DocID025265 Rev 1
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 μA
100
-
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V
V
DS
= 100 V; T
C
= 125 °C
10
100
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA2.5
4.5
V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 12.5 A
0.027
0.035
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-920
-
pF
C
oss
Output capacitance
-
215
-
pF
C
rss
Reverse transfer
capacitance
-19
-
pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 25 A
V
GS
= 10 V
Figure 18
-14
-
nC
Q
gs
Gate-source charge
-
7
-
nC
Q
gd
Gate-drain charge
-
3
-
nC



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