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STD35P6LLF6 数据表(PDF) 3 Page - STMicroelectronics |
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STD35P6LLF6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STD35P6LLF6 Electrical ratings DocID025600 Rev 3 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 25 A IDM(1) Drain current (pulsed) 140 A PTOT Total dissipation at TC = 25 °C 70 W Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
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