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STD36P4LLF6 数据表(PDF) 3 Page - STMicroelectronics |
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STD36P4LLF6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STD36P4LLF6 Electrical ratings DocID025616 Rev 2 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 36 A ID Drain current (continuous) at TC = 100 °C 26 A IDM (1) Drain current (pulsed) 144 A PTOT Total dissipation at Tc = 25 °C 60 W Tstg Storage temperature -55 to 175 °C Tj Maximum junction temperature 175 °C Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
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