STD46P4LLF6 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STD46P4LLF6

功能描述	P-channel 40 V, 0.0125 Ω typ., StripFET??F6 Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STD46P4LLF6

4/16

DocID025772 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage

drain current

VDS = 40 V, (VGS = 0)

VDS = 40 V, Tc = 125 °C

µA

IGSS

Gate body leakage

current

VGS = ± 20 V, (VDS = 0)

±100

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 23 A

0.0125

0.015

VGS = 4.5 V, ID =23 A

0.017

0.02

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

3525

Coss

Output capacitance

344

Crss

Reverse transfer

capacitance

238.5

Total gate charge

VDD = 20 V, ID = 46 A

VGS = 4.5 V

Qgs

Gate-source charge

11.3

Qgd

Gate-drain charge

13.8

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.

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