STDLED625H datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

DocID024435 Rev 1

3/17

STDLED625H

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

620

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

4.5

Drain current (continuous) at TC = 100 °C

2.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

18.0

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

3.8

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

115

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

dv/dt (2)

ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.79

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max

°C/W

Obsolete

Product(s)

- Obsolete

Product(s)

STDLED625H 数据表(PDF) 3 Page - STMicroelectronics

STDLED625H 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

数据表下载