STDLED656 datasheet(1/22 Pages) STMICROELECTRONICS

部件名	STDLED656

功能描述	Gate charge minimized

PDF	22 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 22 page

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

March 2013

DocID024429 Rev 1

1/22

22

STDLED656, STFILED656,

STPLED656, STULED656

N-channel 650 V, 1.1

Ω typ., 6.0 A Power MOSFET

in DPAK, I2PAKFP, TO-220 and IPAK packages

Datasheet

− preliminary data

Figure 1. Internal schematic diagram

Features

• 100% avalanche tested

• Extremely high dv/dt capability

• Gate charge minimized

• Very low intrinsic capacitance

• Improved diode reverse recovery

characteristics

• Zener-protected

Applications

• LED lighting applications

Description

These Power MOSFETs boast extremely low on-

resistance and very good dv/dt capability,

rendering them suitable for buck-boost and

flyback topologies.

D(2,TAB)

G(1)

S(3)

AM01476v1

1

2

3

TAB

TO-220

DPAK

IPAK

I²PAKFP

1

3

TAB

1 2

3

2

1

TAB

Order codes

VDS

RDS(on)

max

ID

PTOT

STDLED656

650 V

1.3

Ω

6.0 A

70 W

STFILED656

25 W

STPLED656

70 W

STULED656

Table 1. Device summary

Order codes

Marking

Package

Packaging

STDLED656

LED656

DPAK

Tape and reel

STFILED656

I2PAKFP (TO-281)

Tube

STPLED656

TO-220

STULED656

IPAK

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

类似零件编号 - STDLED656

制造商	部件名	数据表	功能描述
STMicroelectronics	STDLED602	1Mb / 19P	N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages 21-Mar-2013
	STDLED623	1Mb / 18P	Very low intrinsic capacitance 03-Sep-2013
	STDLED624	1Mb / 22P	N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages 21-Mar-2013
	STDLED625	1Mb / 18P	Gate charge minimized 28-Aug-2013
	STDLED625H	1Mb / 17P	Gate charge minimized 22-Mar-2013

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类似说明 - STDLED656

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