STF5N60M2

Electrical ratings

DocID025320 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID(1)

3.5

A

2.2

IDM(2)

Drain current (pulsed)

14

A

20

W

Insulation withstand voltage (RMS) from all three leads to

2500

V

dv/dt (3)

Peak diode recovery voltage slope

15

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max.

6.25

°C/W

Thermal resistance junction-ambient max.

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

0.5

A

Single pulse avalanche energy

80

mJ