STF7N80K5 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STF7N80K5, STFI7N80K5

4/14

DocID025377 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

800

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

VDS = 800 V, Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 3 A

0.95

1.2

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-360

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-1

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

VGS = 0, VDS = 0 to 640 V

-47

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-20

Intrinsic gate resistance

f = 1 MHz, ID=0

Total gate charge

VDD = 640 V, ID = 6 A

VGS =10 V

(see Figure 15)

13.4

Qgs

Gate-source charge

3.7

Qgd

Gate-drain charge

7.5

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