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STF18N60M2 数据表(PDF) 6 Page - STMicroelectronics |
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STF18N60M2 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Electrical characteristics STF18N60M2 6/13 DocID024729 Rev 3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics ID 1 0.1 0.01 0.1 1 100 VDS(V) 10 (A) Operation in this ar ea is Limit ed b y max R DS(on) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 10 AM15834v1 ID 15 10 5 0 0 10 VDS(V) (A) 5 15 20 4V 5V 6V VGS=7, 8, 9, 10V 20 25 30 AM15837v1 ID 10 0 0 4 VGS(V) 8 (A) 2 6 20 30 VDS=18V 10 5 15 25 AM15838v1 Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance VDS VGS 6 4 2 0 0 Qg(nC) (V) 5 8 10 VDD=480V 300 200 100 0 400 VDS 10 500 VDS (V) ID=13A 15 20 25 12 AM15839v1 RDS(on) 0.260 0.255 0.250 0.245 0 2 ID(A) ( Ω) 0.265 4 VGS=10V 0.270 6 8 10 12 AM15840v1 |
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