STF18N65M2 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STF18N65M2

4/13

DocID026877 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

µA

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 6 A

0.275

0.33

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

770

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-1.2

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

175

Intrinsic gate

resistance

f = 1 MHz, ID = 0

6.1

Ω

Total gate charge

VDD = 520 V, ID = 12 A,

VGS = 10 V

(see Figure 15)

-20

Qgs

Gate-source charge

3.6

Qgd

Gate-drain charge

8.5

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and Figure 19)

-11

Rise time

7.5

td(off)

Turn-off delay time

Fall time

12.5

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