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STF100N6F7 数据表(PDF) 1 Page - STMicroelectronics |
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STF100N6F7 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() This is information on a product in full production. February 2015 DocID027211 Rev 3 1/13 STF100N6F7 N-channel 60 V, 4.6 m Ω typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1. Internal schematic diagram Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code VDS RDS(on) max. ID PTOT STF100N6F7 60 V 5.6 m Ω 46 A 25 W Table 1. Device summary Order code Marking Package Packaging STF100N6F7 100N6F7 TO-220FP Tube www.st.com |
类似零件编号 - STF100N6F7 |
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类似说明 - STF100N6F7 |
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