LET9060STR datasheet(3/11 Pages) STMICROELECTRONICS

部件名	LET9060STR

功能描述	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	11 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 11 page

LET9060

Electrical characteristics

Doc ID 010019 Rev 1

3/11

Electrical characteristics

TC = 25 °C

Table 4.

Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V; IDS = 10 mA

IDSS

VGS = 0 V; VDS = 28 V

µA

IGSS

VGS = 5 V; VDS = 0 V

µA

VGS(Q)

VDS = 28 V; ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V; ID = 3 A

0.8

1.2

GFS

VDS = 10 V; ID = 3 A

2.5

mho

CISS

VGS = 0 V; VDS = 28 V; f = 1 MHz

COSS

VGS = 0 V; VDS = 28 V; f = 1 MHz

CRSS

VGS = 0 V; VDS = 28 V; f = 1 MHz

1.2

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 28 V; IDQ = 300 mA; f = 960 MHz

GPS

VDD = 28 V; IDQ = 300 mA; POUT = 60 W; f = 960 MHz

17.2

VDD = 28 V; IDQ = 300 mA; PIN = 2 W; f = 960 MHz

Load

mismatch

VDD = 28 V; IDQ = 300 mA; POUT = 60 W; f = 960 MHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

Table 7.

Moisture sensitivity level

Test conditions

Rating

J-STD-020B

MSL 3

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