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STAC2933 数据表(PDF) 1 Page - STMicroelectronics |
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STAC2933 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2012 Doc ID 022676 Rev 1 1/12 12 STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT =300Wmin.with20dBgain@30 MHz ■ STAC air cavity packaging technology - STAC® package Description The STAC2933 is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up 150 MHz. Its special low thermal-resistance package makes it ideal for ISM applications where reliability and ruggedness are critical factors. Figure 1. Pin connection STAC177B 1 (drain) 2 (source) 3 (gate) 4 (source) 5 (source) on backside Table 1. Device summary Order code Marking Base qty. Package Packaging(1) STAC2933 STAC2933(1) 25 pcs STAC177B Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.. www.st.com |
类似零件编号 - STAC2933 |
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类似说明 - STAC2933 |
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