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STAC3932F 数据表(PDF) 1 Page - STMicroelectronics |
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STAC3932F 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. March 2010 Doc ID 15513 Rev 4 1/16 16 STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description The STAC3932F is a N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. Figure 1. Pin connection STAC244F Air cavity 1. Drain 2. Gate 3. Source (Bottom side) 1 1 2 2 3 Table 1. Device summary Order code Marking Package Packaging STAC3932F STAC3932F STAC244F Plastic tray www.st.com |
类似零件编号 - STAC3932F |
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类似说明 - STAC3932F |
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