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STL4P2UH7 数据表(PDF) 3 Page - STMicroelectronics |
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STL4P2UH7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() DocID025028 Rev 3 3/13 STL4P2UH7 Electrical ratings 13 1 Electrical ratings Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ± 8 V ID (1) 1. The value is rated according to Rthj-pcb Drain current (continuous) at Tpcb = 25 °C 4 A ID (1) Drain current (continuous) at Tpcb = 100 °C 2.5 A IDM (1)(2) 2. Pulse width limited by safe operating area Drain current (pulsed) 16 A PTOT (1) Total dissipation at Tpcb = 25 °C 2.4 W Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on 1inch2 FR-4 board, 2 oz Cu. Thermal resistance junction-pcb max, single operation 52 °C/W |
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