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STL8N6F7 数据表(PDF) 3 Page - STMicroelectronics |
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STL8N6F7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STL8N6F7 Electrical ratings DocID028258 Rev 1 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 36 A ID (1) Drain current (continuous) at TC = 100 °C 22 A IDM (1)(2) Drain current (pulsed) 144 A ID (3) Drain current (continuous) at Tpcb = 25 °C 8 A ID (3) Drain current (continuous) at Tpcb = 100 °C 5 A IDM (2)(3) Drain current (pulsed) 32 A PTOT (1) Total dissipation at TC = 25 °C 60 W PTOT (3) Total dissipation at Tpcb = 25 °C 3 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1)This value is rated according to Rthj-c. (2)Pulse width limited by safe operating area. (3)This value is rated according to Rthj-pcb. Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb (1) Thermal resistance junction-pcb max. 42.8 °C/W Rthj-case Thermal resistance junction-case max. 2.1 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec. |
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