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2ST1480FP 数据表(PDF) 3 Page - STMicroelectronics |
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2ST1480FP 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 2ST1480FP Electrical characteristics Doc ID 16856 Rev 1 3/7 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCE = 80 V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 0.1 µA V(BR)CEO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter breakdown voltage (IB = 0) IC = 10 mA 80 V VCE(sat) (1) Collector-emitter saturation voltage IC = 3 A IB = 300 mA 1 V VBE(on) (1) Base-emitter on voltage IC = 3 A VCE = 5 V 1.5 V hFE (1) DC current gain IC = 0.5 A VCE = 5 V IC = 3 A VCE = 5 V 170 50 290 fT Transition frequency IC = 50 mA_ VCE = 10 V 120 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 20 pF ton toff Resistive load Turn-on time Turn-off time IC = 1.5 A, VCC = 10 V IB(on) = - IB(off) = 150 mA 60 450 ns ns Obsolete Product(s) - Obsolete Product(s) |
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