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2ST1480FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 2ST1480FP
功能描述  High current gain characteristic
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2ST1480FP 数据表(HTML) 3 Page - STMicroelectronics

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2ST1480FP
Electrical characteristics
Doc ID 16856 Rev 1
3/7
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCE = 80 V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
0.1
µA
V(BR)CEO
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter breakdown
voltage (IB = 0)
IC = 10 mA
80
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 3 A
IB = 300 mA
1
V
VBE(on)
(1)
Base-emitter on voltage
IC = 3 A
VCE = 5 V
1.5
V
hFE
(1)
DC current gain
IC = 0.5 A
VCE = 5 V
IC = 3 A
VCE = 5 V
170
50
290
fT
Transition frequency
IC = 50 mA_ VCE = 10 V
120
MHz
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
20
pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 1.5 A, VCC = 10 V
IB(on) = - IB(off) = 150 mA
60
450
ns
ns
Obsolete
Product(s)
- Obsolete
Product(s)



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