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2STF1525 数据表(PDF) 3 Page - STMicroelectronics |
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2STF1525 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 2STF1525 Electrical characteristics Doc ID 15794 Rev 2 3/7 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 50 V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 4 V 0.1 µA V(BR)CEX Collector-emitter breakdown voltage (VBE = -1.5 V) IC = 1 mA 95 V V(BR)CEO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter breakdown voltage (IB = 0) IC = 10 mA 25 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 µA 5 V hFE (1) DC current gain IC = 0.5 A VCE = 2 V IC = 3 A VCE = 2 V IC = 5 A VCE = 5 V 150 100 150 500 VCE(sat) (1) Collector-emitter saturation voltage IC = 3 A IB = 300 mA IC = 3.5 A IB = 40 mA 220 500 mV mV VBE(sat) (1) Base-emitter saturation voltage IC = 3 A IB = 300 mA 1.2 V CCBO Collector-base capacitance (IE = 0) VCB = 10 V, f = 1 MHz 20 pF fT Transition frequency VCE = 10 V IC = 50 mA 120 MHz ton toff Resistive load Turn-on time Turn-off time IC = 1.5 A VCC = 10 V IB1 = -IB2 = 150 mA 60 450 ns ns Obsolete Product(s) - Obsolete Product(s) |
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