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2STF2280 数据表(PDF) 3 Page - STMicroelectronics |
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2STF2280 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 2STF2280 Electrical characteristics Doc ID 16984 Rev 1 3/7 2 Electrical characteristics TCASE = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = -80 V -500 µA ICEO Collector cut-off current (IB = 0) VCE = -80 V -1 mA IEBO Emitter cut-off current (IC = 0) VEB = -5 V -100 µA VCEO(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC = -10 mA -80 V VCE(sat) (1) Collector-emitter saturation voltage IC = -100 mA, IB = -10 mA IC = -1 A, IB = -100 mA -15 -100 -250 mV mV VBE(sat) (1) Base-emitter saturation voltage IC = -100 mA, IB = -10 mA IC = -1 A, IB = -100 mA -1 -1.1 V V hFE (1) DC current gain IC = -100 mA, VCE = -2 V IC = -500 mA, VCE = -2 V IC = -1 A, VCE = -2 V 140 100 80 190 300 fT Transition frequency IC = -0.1 A, VCE = -10 V 50 MHz 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. |
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