3STF1640 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

3STF1640

4/12

DocID023648 Rev 3

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 40 V

0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

V(BR)CEO

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 1 A, IB = 20 mA

IC = 1 A, IB = 100 mA

IC = 6 A, IB = 300 mA

170

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 6 A, IB = 6 mA

1.1

hFE

(1)

DC current gain

IC = 1 A, VCE = 1 V

350

IC = 6 A, VCE = 1 V

100

IC = 20 A, VCE = 1 V

Transition frequency

IC = 0.1 A

VCE = 10 V

f = 100 MHz

100

MHz

CCBO

Collector-base

capacitance (IE = 0)

f = 1 MHz

VCB = 10 V

ton

Resistive load

Turn-on time

IC = 1.5 A

VCC = 10 V

TBD

toff

Turn-off time

IB(on) = - IB(off) = 150 mA

VBB(off) = - 5 V

TBD

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