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BULT3P3 数据表(PDF) 3 Page - STMicroelectronics |
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BULT3P3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() BULT3P3 Electrical characteristics Doc ID 16300 Rev 1 3/8 2 Electrical characteristics Tcase = 25 °C unless otherwise specified Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = - 300 V VCE = - 300 V TC = 125 °C -0.1 -0.5 mA mA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = - 10 mA -6 -12 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter sustaining voltage (IB = 0) IC = - 10 mA -200 V VCE(sat) (1) Collector-emitter saturation voltage IC = - 0.7 A IB = - 0.1 A IC = - 1 A _ _ IB = - 0.2 A -0.5 -0.5 V V VBE(sat) (1) Base-emitter saturation voltage IC = - 0.5 A__ IB = - 0.1 A IC = - 1 A ___ IB = - 0.2 A IC = - 2 A ___ IB = - 0.4 A -1.0 -1.1 -1.3 V V V hFE DC current gain IC = - 10mA VCE = - 5 V IC = - 0.75 A VCE = - 5 V IC = - 2 A VCE = - 5 V 10 22 4 28 36 tr ts tf Resistive load Rise time Storage time Fall time IC = - 0.7 A _ VCC = - 150 V IB(on) = - IB(off) = 140 mA Tp = 30 µs 60 1.2 70 1.6 100 ns µs ns ts tf Inductive load Storage time Fall time IC = - 1 A _ IB(on) = 100 mA VBE(off) = 5 V Rbb = 0 Vclamp = 150 V L = 1 mH 110 35 180 70 ns ns |
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