HVLED001A datasheet(11/30 Pages) STMICROELECTRONICS

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HVLED001A

Electrical characteristics

IFBsnk

FB pull-down current

Active mode, VZCD,off = 3.2 V,

VFB = 1.65 V

1.3

2.7

VBm

Burst mode threshold

Active mode(5)

0.97

1.054

1.11

Tbm

Burst mode repetition

rate

VFB = 0.8 V(3), VTOFF = 2.5 V

0.8

1.04

1.4

VOFP

Optocoupler failure

protection threshold

Active mode(5)

2.75

2.95

3.4

TOFP

Max. active mode

duration after FB

clamping

VFB > VFB,max(3)

100

130

PSR function

VREF,PSR

PSR loop reference

Tamb = 25 °C(7)

2.55

2.6

2.65

Over all temperature range (4), (7)

2.5

2.6

2.7

Transconductance

IFB = ± 10 A,

VFB = 1.65 V

1.3

2.3

3.2

Current sense input(8)

VCS,lim

Current sense

reference clamp

VHVSU = DC voltage,

VFB = 3.3 V,

1.9 V < VCTRL < 2.4 V

620

750

890

VCS,min

Current sense minimum

level

ICS

Current sense pin bias

current

VCS = 500 mV(4)

2.5

µA

TLEB

Leading edge blanking

140

340

470

VOCP

Saturation protection

threshold

During Ton

1.1

1.2

TOCP

Max. stop state duration

after OCP

tpulse = 1 µs, amplitude 2 V(3)

0.72

1.04

1.41

VCS_SS

VCS during SS

VCTRL = 0.7 V

280

348

450

VCTRL = Vctrl,bias

VCS,lim

ZCD input

VZCD,arm

ZCD ZCD arming threshold

After Tblank,min(7)

0.42

0.5

0.6

VZCD,trig

ZCD

ZCD triggering

threshold

Negative going edge(7)

0.24

0.3

0.38

TBLANK,min

ZCD ZCD min. blanking time From MOS turn off

1.5

3.2

4.6

µs

TBLANK,var

ZCD

ZCD programmable

blanking time

VTOFF = 0 V(9), from 1st ZCD trig

after TBLANK,min

120

200

290

µs

VZCD,cl_l

ZCD

ZCD negative clamping

voltage

IZCD src = 1 mA

-230

-100

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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