SRK2000ATR datasheet(8/19 Pages) STMICROELECTRONICS

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Electrical characteristics

SRK2000A

8/19

DocID025407 Rev 3

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

Gate drive enable function

VEN_On

Enable threshold

Positive-going edge(1)

1.7

1.8

1.9

Hyst

Hysteresis

Below VEN_On

-45

IEN

Bias current

VEN = VEN_On

µA

Turn-off threshold selection

VEN-Th

Selection threshold

VCC = VCCOn

0.32

0.36

0.40

IEN

Pull-down current

VEN = VEN_Th, VCC = VCCOn

710

µA

Gate drivers

VGDH

Output high voltage

IGDsource = 5 mA

11.75

11.9

IGDsource = 5 mA, VCC = 5 V

4.75

4.9

VGDL

Output low voltage

IGDsink = 200 mA

0.2

IGDsink = 200 mA, VCC = 5 V

0.2

Isourcepk

Output source peak

current

-1

Isinkpk

Output sink peak current

3.5

Fall time

Rise time

VGDclamp Output clamp voltage

IGDsource = 5 mA; VCC = 20 V

VGDL_UVLO UVLO saturation

VCC = 0 to VCCon

Isink = 5 mA

-1

1.3

1. Parameters tracking each other.

2. For VCC > 30 V IDVS1,2_b may be greater than 1 µA because of the possible current contribution of the

internal clamp Zener (few tens of µA).

Table 5. Electrical characteristics (continued)

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