STFN42 datasheet(3/10 Pages) STMICROELECTRONICS

部件名	STFN42

功能描述	High voltage fast-switching NPN power transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 10 page

STFN42

Electrical characteristics

Doc ID 12193 Rev 3

3/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified).

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 700 V

VCE = 700 V;

TC= 125 °C

0.1

0.5

IEBO

Collector cut-off current

(IC =0)

VEB = 9 V

0.1

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IB =0)

IC = 10 mA

400

VCE(sat)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

saturation voltage

IC = 0.25 A

IB = 0.05 A

IC = 0.5 A

IB = 0.125 A

IC = 0.75 A

IB = 0.25 A

0.2

0.3

0.4

0.5

1.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 0.25 A

IB = 0.05 A

IC = 0.5 A

IB = 0.125 A

1.2

hFE

(1)

DC current gain

IC = 0.4 A

VCE = 5 V

IC = 0.8 A

VCE = 5 V

Inductive load

Fall time

IC = 250 mA IB(on) = -IB(off) = 50 mA

L = 200 µH

0.3

µs

Obsolete

Product(s)

- Obsolete

Product(s)

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