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STGP3HF60HD 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGP3HF60HD
功能描述  4.5 A, 600 V very fast IGBT with Ultrafast diode
PDF  26 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP3HF60HD 数据表(HTML) 5 Page - STMicroelectronics

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STGB3HF60HD, STGD3HF60HDT4,
STGF3HF60HD, STGP3HF60HD
Electrical characteristics
DocID17690 Rev 5
5/26
Table 6: Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 400 V, IC = 1.5 A
RG
= 100 Ω, VGE = 15 V
(see Figure 17: " Test circuit for
inductive load switching"Figure 19:
" Switching waveform")
-
11
-
ns
tr
Current rise time
-
4
-
ns
(di/dt)on
Turn-on current slope
-
285
-
A/µs
td(on)
Turn-on delay time
VCC = 400 V, IC = 1.5 A
RG
= 100 Ω, VGE = 15 V,
Tj = 125 °C (see Figure 17: " Test
circuit for inductive load
switching"Figure 19: " Switching
waveform")
-
10
-
ns
tr
Current rise time
-
5
-
ns
(di/dt)on
Turn-on current slope
-
265
-
A/µs
tr(Voff)
Off voltage rise time
VCC = 400 V, IC = 1.5 A,
RGE
= 100 Ω, VGE = 15 V
(see Figure 17: " Test circuit for
inductive load switching"Figure 19:
" Switching waveform")
-
26
-
ns
td(off)
Turn-off delay time
-
60
-
ns
tf
Current fall time
-
50
-
ns
tr(Voff)
Off voltage rise time
VCC = 400 V, IC = 1.5 A,
RGE
= 100 Ω, VGE = 15 V,
Tj = 125 °C (see Figure 17: " Test
circuit for inductive load
switching"Figure 19: " Switching
waveform")
-
64
-
ns
td(off)
Turn-off delay time
-
69
-
ns
tf
Current fall time
-
71
-
ns
Table 7: Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon(1)
Turn-on switching
energy
VCC = 400 V, IC = 1.5 A
RG
= 100 Ω, VGE = 15 V
(see Figure 17: " Test circuit for
inductive load switching"Figure 19:
" Switching waveform")
-
19
-
µJ
Eoff(2)
Ets
Turn-off switching
energy
-
12
-
µJ
Ets
Total switching energy
-
31
-
µJ
Eon(1)
Turn-on switching
energy
VCC = 400 V, IC = 1.5 A
RG =
100 Ω, VGE = 15 V,
Tj = 125 °C (see Figure 17: " Test
circuit for inductive load
switching"Figure 19: " Switching
waveform")
-
38
-
µJ
Eoff(2)
Turn-off switching
energy
-
35
-
µJ
Ets
Total switching energy
-
73
-
µJ
Notes:
(1)Eon is the turn-on energy when a typical diode is used in the test circuit in Figure 17: " Test circuit for
inductive load switching". If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C).
(2)Turn-off energy include also the tail of the collector current.



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