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STGP3NC120HD 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGP3NC120HD
功能描述  7 A, 1200 V very fast IGBT with ultrafast diode
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP3NC120HD 数据表(HTML) 5 Page - STMicroelectronics

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STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Electrical characteristics
Doc ID 11089 Rev 4
5/16
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
-
15
3.5
880
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
-
14.5
4
770
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
-
72
118
250
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
-
132
210
470
-
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
-
236
290
526
-
µJ
µJ
µJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
-
360
620
980
-
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 1.5 A
IF = 1.5 A, TJ = 125 °C
-
1.6
1.3
2.0
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 3 A, VR = 40 V,
di/dt = 100 A/µs
(see Figure 23)
-
51
85
3.3
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 3 A, VR = 40 V,
TJ = 125 °C,
di/dt = 100 A/µs
(see Figure 23)
-
64
133
4.2
ns
nC
A



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