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STGP20V60F 数据表(PDF) 5 Page - STMicroelectronics |
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STGP20V60F 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() DocID024890 Rev 1 5/18 STGB20V60F, STGP20V60F Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CE = 400 V, I C = 20 A, V GE = 15 V , di/dt = 100 A/ μs see Figure 21 -38 - ns t r Current rise time - 10 - ns (di/dt) on Turn-on current slope - 1556 - A/μs t d(off) Turn-off delay time - 149 - ns t f Current fall time - 15 - ns E on (1) 1. Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW20V60DF Turn-on switching losses - 200 - μJ E off (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 130 - μJ E ts Total switching losses - 330 - μJ t d(on) Turn-on delay time V CE = 400 V, I C = 20 A, di/dt = 100 A/μs, V GE = 15 V , T J = 175 °C, see Figure 21 -37 - ns t r Current rise time - 12 - ns (di/dt) on Turn-on current slope - 1340 - A/μs t d(off) Turn-off delay time - 150 - ns t f Current fall time - 23 - ns E on (1) Turn-on switching losses - 430 - μJ E off (2) Turn-off switching losses - 210 - μJ E ts Total switching losses - 640 - μJ |
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