STGP30V60F datasheet(1/19 Pages) STMICROELECTRONICS

部件名	STGP30V60F

功能描述	Low thermal resistance

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 19 page

This is information on a product in full production.

April 2014

DocID025049 Rev 4

1/19

19

STGB30V60F,

STGP30V60F

Trench gate field-stop IGBT, V series

600 V, 30 A very high speed

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: TJ = 175 °C

• Tail-less switching off

• VCE(sat) = 1.85 V (typ.) @ IC = 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive VCE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2, TAB)

G (1)

E (3)

D2PAK

TO-220

1

3

TAB

1

2

3

TAB

Table 1. Device summary

Order codes

Marking

Package

Packaging

STGB30V60F

GB30V60F

D2PAK

Tape and reel

STGP30V60F

GP30V60F

TO-220

Tube

www.st.com

类似零件编号 - STGP30V60F

制造商	部件名	数据表	功能描述
STMicroelectronics	STGP30V60DF	1Mb / 22P	Low thermal resistance 08-Oct-2013

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