STGWT30V60DF datasheet(1/22 Pages) STMICROELECTRONICS

部件名	STGWT30V60DF

功能描述	Low thermal resistance

PDF	22 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 22 page

This is information on a product in full production.

October 2013

DocID024361 Rev 4

1/22

22

STGB30V60DF, STGP30V60DF,

STGW30V60DF, STGWT30V60DF

Trench gate field-stop IGBT, V series

600 V, 30 A very high speed

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.85 V (typ.) @ I

C

= 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2, TAB)

G (1)

E (3)

TO-247

TO-3P

1

2

3

1

2

3

1

3

TAB

D²PAK

1

2

3

TAB

TO-220

TAB

Table 1. Device summary

Order codes

Marking

Package

Packaging

STGB30V60DF

GB30V60DF

D²PAK

Tape and reel

STGP30V60DF

GP30V60DF

TO-220

Tube

STGW30V60DF

GW30V60DF

TO-247

Tube

STGWT30V60DF

GWT30V60DF

TO-3P

Tube

www.st.com

类似零件编号 - STGWT30V60DF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGWT30V60F	1Mb / 19P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed 08-Apr-2014

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