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STGD10NC60ST4 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGD10NC60ST4
功能描述  10 A, 600 V fast IGBT
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD10NC60ST4 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGD10NC60S, STGP10NC60S
4/18
Doc ID 15931 Rev 2
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)CES
Collector-emitter breakdown
voltage (VGE= 0)
IC= 1 mA
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE= 15 V, IC= 5 A
VGE= 15 V, IC= 5 A, TJ= 125 °C
1.45
1.45
1.65
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
3.75
5.75
V
ICES
Collector cut-off current
(VGE=0)
VCE= 600 V
VCE=600 V, TJ=125 °C
150
1
µA
mA
IGES
Gate-emitter leakage
(VCE=0)
VGE= ±20 V
±100
nA
gfs
Forward transconductance
VCE = 15 V , IC = 5 A
3.5
S
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz, VGE= 0
-
365
44
8
-
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480 V, IC = 5 A,
VGE = 15 V
Figure 16
-
18
8
3.5
-
nC
nC
nC
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Figure 17
-
19
4
1330
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TJ= 125°C
Figure 17
-
18
4.5
1000
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
Figure 17
-
100
160
205
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
TJ = 125°C
Figure 17
-
165
250
310
-
ns
ns
ns
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Product(s)
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