数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STGF19NC60SD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGF19NC60SD
功能描述  20 A, 600 V fast IGBT with Ultrafast diode
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF19NC60SD 数据表(HTML) 3 Page - STMicroelectronics

  STGF19NC60SD Datasheet HTML 1Page - STMicroelectronics STGF19NC60SD Datasheet HTML 2Page - STMicroelectronics STGF19NC60SD Datasheet HTML 3Page - STMicroelectronics STGF19NC60SD Datasheet HTML 4Page - STMicroelectronics STGF19NC60SD Datasheet HTML 5Page - STMicroelectronics STGF19NC60SD Datasheet HTML 6Page - STMicroelectronics STGF19NC60SD Datasheet HTML 7Page - STMicroelectronics STGF19NC60SD Datasheet HTML 8Page - STMicroelectronics STGF19NC60SD Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 15 page
background image
STGF19NC60SD, STGP19NC60SD
Electrical ratings
Doc ID 13689 Rev 4
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula
Continuous collector current at TC = 25°C
40
17
A
IC
(1)
Continuous collector current at TC = 100°C
20
11
A
ICP
(2)
2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current
80
A
ICL
(3)
3.
Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current
80
A
IF
Diode RMS forward current at TC = 25°C
20
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
50
A
VGE
Gate-emitter voltage
±20
V
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
PTOT
Total dissipation at TC = 25°C
130
32
W
Tj
Operating junction temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
Rthj-c
Thermal resistance junction-case IGBT
0.96
3.9
°C/W
Thermal resistance junction-case diode
3
5.5
°C/W
Rthj -a
Thermal resistance junction-ambient
62.5
°C/W
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
----------------------------------------------------------------------------------------------------------
=



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com