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STGF100N30 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGF100N30
功能描述  90 A - 330 V - fast IGBT
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF100N30 数据表(HTML) 3 Page - STMicroelectronics

  STGF100N30 Datasheet HTML 1Page - STMicroelectronics STGF100N30 Datasheet HTML 2Page - STMicroelectronics STGF100N30 Datasheet HTML 3Page - STMicroelectronics STGF100N30 Datasheet HTML 4Page - STMicroelectronics STGF100N30 Datasheet HTML 5Page - STMicroelectronics STGF100N30 Datasheet HTML 6Page - STMicroelectronics STGF100N30 Datasheet HTML 7Page - STMicroelectronics STGF100N30 Datasheet HTML 8Page - STMicroelectronics STGF100N30 Datasheet HTML 9Page - STMicroelectronics Next Button
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Obsolete
Product(s)
- Obsolete
Product(s)
STGF100N30, STGP100N30, STGW100N30
Electrical ratings
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-247
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
330
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at
TC = 25 °C
90
20
A
IC
(1)
Collector current (continuous) at
TC = 100 °C
45
10
A
ICL
(2)
2.
Vclamp= 300 V, Tj= 150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current
330
A
IRP
Repetitive peak current at TC = 25 °C
330 (3)
3.
Half sine wave with duty cycle = 1%, ton >1 µs
A
VGE
Gate-emitter voltage (continuous)
±20
V
ESD
(HBM)
Electrostatic sensitive discharge, human
body model applied to all three pins
(C = 100 pF, R = 1.5 k
Ω)
3KV
ESD (MM)
Electrostatic sensitive discharge,
machine model applied to all three pins
(C = 200 pF, R = 0)
300
V
PTOT
Total dissipation at TC = 25 °C
250
40
W
Tj
Operating junction temperature
- 55 to 150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
TO-220
TO-247
TO-220FP
Rthj-case
Thermal resistance junction-case max
0.5
3.2
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
50
62.5
°C/W
I
C TC
()
T
jmax
()
T
C
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=



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