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STGP30M65DF2 数据表(PDF) 10 Page - STMicroelectronics |
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STGP30M65DF2 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 16 page ![]() Electrical characteristics STGP30M65DF2 10/16 DocID027355 Rev 3 Err 0.18 di/dt(A/µs) (mJ) 200 600 1000 0.3 1400 IF = 30A, VCC = 400V, VGE = 15V 1800 0.38 =175°C 0.22 TJ 0.26 0.34 GIPD100420151455FSR 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/t tp t Single pulse δ=0.5 ZthTO2T_B Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode |
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