STGW20H60DF datasheet(9/17 Pages) STMICROELECTRONICS

部件名	STGW20H60DF

功能描述	600 V, 20 A high speed trench gate field-stop IGBT

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

9 / 17 page

DocID024745 Rev 1

9/17

STGW20H60DF, STGWT20H60DF

Electrical characteristics

Figure 12. Diode VF vs. forward current

Figure 13. Gate charge vs. gate-emitter voltage

Figure 14. Capacitance variations vs. VCE

Figure 15. Switching losses vs. gate resistance

Figure 16. Switching losses vs. collector

current

Figure 17. Switching losses vs. temperature

1.9

1.5

1.1

IF(A)

(V)

TJ= -40 °C

2.3

TJ= 25 °C

TJ= 175 °C

AM16293V1

VGE

Qg(nC)

(V)

VCC= 400 V

IC= 20 A

120

AM16294V1

1000

100

0.1

VCE(V)

(pF)

Coes

Cies

Cres

AM16295V1

550

450

350

RG(

Ω)

(µJ)

EOFF

EON

650

750

VCC= 400 V, VGE = 15V,

IC = 20 A, TJ = 175°C

AM16296V1

600

400

200

IC(A)

(µJ)

EOFF

EON

800

1000

VCC= 400 V, VGE = 15V,

Rg = 10

Ω, TJ = 175°C

AM162961V1

400

300

200

TJ(°C)

(µJ)

EOFF

EON

125

VCC= 400 V, VGE = 15V,

Rg = 10

Ω, IC = 20 A

AM16297V1

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