STGWA35HF60WDI datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STGW35HF60WDI

4/15

Doc ID 16090 Rev 3

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 20 A

VGE = 15V, IC = 20 A,TJ= 125 °C

1.9

1.65

2.5

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TJ = 125 °C

250

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100

gfs

Forward transconductance

VCE = 15 V, IC = 20 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

2400

235

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 20 A,

VGE = 15 V,

(see Figure 17)

140

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

(see Figure 16)

1650

A/µs

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

TJ = 125 °C (see Figure 16)

1600

A/µs

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