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STGWT30H60DFB 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGWT30H60DFB
功能描述  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWT30H60DFB 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
November 2016
DocID026676 Rev 3
1/20
20
STGW30H60DFB, STGWA30H60DFB,
STGWT30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
TO-247
1
2
3
TO-3P
1
2
3
TO-247 long leads
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW30H60DFB
GW30H60DFB
TO-247
Tube
STGWA30H60DFB
GWA30H60DFB
TO-247 long leads
Tube
STGWT30H60DFB
GWT30H60DFB
TO-3P
Tube
www.st.com


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