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STGWA40H120DF2 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGWA40H120DF2
功能描述  Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGWA40H120DF2 数据表(HTML) 9 Page - STMicroelectronics

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STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
DocID023753 Rev 5
9/17
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
30
(µs)
t
SC
I
SC
V
CC ≤ 600 V
T
J ≤ 150 °C
(A)
14
10
10
VGE(V)
11
12
13
26
tsc
14
18
22
80
320
200
260
140
Isc
GIPG190320151623 RV
t
IC(A)
(ns)
0
20
40
10
60
tf
TJ= 175°C, VGE= 15V,
RG
= 10Ω, VCC= 600V
tdoff
100
80
tdon
tr
1
GIPG140320141159FSR
RG
(Ω)
0
10
20
30
tf
TJ= 175°C, VGE= 15V,
IC= 40A, VCC= 600V
40
tdoff
tr
tdon
t
(ns)
10
100
1
GIPG140320141205FSR
Irm
0
di/dt(A/µs)
(A)
0
400
800
10
1200
IF = 40A, VCC = 600V,
VGE = 15V
1600
15
=175°C
20
5
TJ
25
30
GIPG140320141215FSR
trr
0
di/dt(A/µs)
(ns)
0
400
800
400
1200
IF = 40A, VCC = 600V,
VGE = 15V
1600
600
=175°C
800
200
TJ
1000
1200
1400
GIPG140320141222FSR
Qrr
3000
di/dt(A/µs)
(nC)
0
400
800
4500
1200
IF = 40A, VCC = 600V,
VGE = 15V
1600
5000
=175°C
4000
TJ
3500
5500
6000
GIPG140320141238FSR



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