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STGWA80H65DFB 数据表(PDF) 7 Page - STMicroelectronics |
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STGWA80H65DFB 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() STGWA80H65DFB Electrical characteristics DocID030057 Rev 1 7/17 Figure 6: Power dissipation vs. case temperature Figure 7: VCE(sat) vs. junction temperature Figure 8: VCE (sat) vs. collector current Figure 9: Forward bias safe operating area 100 0 0 TC(°C) P TOT (W) 100 200 50 300 150 400 GIPD160920130948FSR V GE = 15 V, TJ = 175 °C |
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