STGWT80H65DFB datasheet(4/22 Pages) STMICROELECTRONICS

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Electrical characteristics

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST-

4/22

DocID024366 Rev 6

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 80 A

1.6

VGE = 15 V, IC = 80 A

TJ = 125 °C

1.8

VGE = 15 V, IC = 80 A

TJ = 175 °C

1.9

Forward on-voltage

IF = 80 A

1.9

2.3

IF = 80 A TJ = 125 °C

1.6

IF = 80 A TJ = 175 °C

1.5

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 650 V

100

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

10524

Coes

Output capacitance

385

Cres

Reverse transfer

capacitance

-215

Total gate charge

VCC = 520 V, IC = 80 A,

VGE = 15 V, see Figure 29

-414

Qge

Gate-emitter charge

Qgc

Gate-collector charge

170

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