| 数据搜索系统,热门电子元器件搜索 |
|
STL42P4LLF6 数据表(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STL42P4LLF6 数据表(HTML) 3 Page - STMicroelectronics |
|
3 / 14 page ![]() STL42P4LLF6 Electrical ratings DocID025618 Rev 2 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 42 A ID (1) Drain current (continuous) at TC = 100 °C 29 A ID (1)(3) Drain current (pulsed) 168 A ID (2) Drain current (continuous) at Tpcb= 25 °C 10 A ID (2) Drain current (continuous) at Tpcb= 100 °C 7.5 A IDM (2)(3) Drain current (pulsed) 40 A PTOT (1) Total dissipation at TC = 25 °C 75 W P TOT (2) Total dissipation at Tpcb= 25 °C 4.8 W Tstg Storage temperature -55 to 175 °C Tj Maximum junction temperature 175 °C Notes: (1) The value is limited by Rthj-case. (2) The value is limited by Rthj-pcb. (3) Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.00 °C/W Rthj-pcb (1) Thermal resistance junction-pcb, single operation 31.3 °C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2oz Cu, steady state For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |