STL42PLLF6 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STL42P6LLF6

4/16

DocID025457 Rev 4

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = -250 µA

-60

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = -60 V

-1

µA

VGS = 0 V, VDS = -60 V,

TC = 125 °C(1)

-10

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

RDS(on)

Static drain-source on-

resistance

VGS = -10 V, ID = -4.5 A

mΩ

VGS = -4.5 V, ID= -4.5 A

Notes:

(1)Defined by design, not subject to production testing

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz,

VGS = 0 V

3780

Coss

Output capacitance

262

Crss

Reverse transfer

capacitance

170

Total gate charge

VDD = -30 V, ID = -9 A,

VGS = -4.5 V

(see Figure 14: "Gate charge

test circuit")

Qgs

Gate-source charge

10.8

Qgd

Gate-drain charge

10.5

Gate input resistance

ID = 0 A, f = 1 MHz

1.7

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -30 V, ID = -4.5 A,

RG = 4.7

Ω, VGS = -10 V

(see Figure 13: "Switching

times test circuit for resistive

load")

51.4

Rise time

td(off)

Turn-off-delay time

171

Fall time

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