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STL58N3LLH5 数据表(PDF) 5 Page - STMicroelectronics

部件名 STL58N3LLH5
功能描述  Automotive-grade N-channel 30 V, 0.0076 Ω typ., 56 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL58N3LLH5 数据表(HTML) 5 Page - STMicroelectronics

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STL58N3LLH5
Electrical characteristics
16
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 15 V, ID = 7.5 A,
RG =4.7 Ω, VGS =10V
(see Figure 13)
-10.8
-
ns
tr
Rise time
-
15.6
-
ns
td(off)
Turn-off delay time
-
14.2
-
ns
tf
Fall time
-
6
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
56
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
224
A
VSD
(2)
2.
Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 15 A, VGS =0 V
-
1.1
V
trr
Reverse recovery time
ISD = 15 A,
di/dt = 100 A/µs,
VDD =25V,
TJ =150 °C
-20
36
ns
Qrr
Reverse recovery charge
-
10
18
nC
IRRM
Reverse recovery current
-
1
A



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